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An engineering approach to predict the polishing rate in CMP with rotational equipmentPING HSUN CHEN; SHIN, Han-C; BING WEI HUANG et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp G649-G651, issn 0013-4651Article

Observation of intermediate-range order in a nominally amorphous molecular semiconductor filmBLASINI, Daniel R; RIVNAY, Jonathan; SMILGIES, Detlef-M et al.Journal of material chemistry. 2007, Vol 17, Num 15, pp 1458-1461, issn 0959-9428, 4 p.Article

Calculation of refractive index of some materialsKHEDIM, S; CHIALI, A; BENYOUCEF, B et al.Revue des énergies renouvelables. 2007, pp 337-341, issn 1112-2242, 5 p., NSConference Paper

Planar inductively coupled BCl₃ plasma etching of III-V semiconductorsLIM, W. T; BAEK, I. K; LEE, J. W et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 5, pp G343-G346, issn 0013-4651Article

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Via resistance reduction using cool PVD-Ta processingSEET, C. S; ZHANG, B. C; TAN, J. B et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 12, pp G766-G770, issn 0013-4651Article

Development and application of instrumental methods for strain analysis of semiconductor layers and devicesPAPADIMITRIOU, Dimitra; LIAROKAPIS, Efthymios; RICHTER, Wolfgang et al.Mikrochimica acta (1966. Print). 2001, Vol 136, Num 3-4, pp 165-169, issn 0026-3672Conference Paper

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrateXINHONG YU; ZHE WANG; SUNYANG YU et al.Applied surface science. 2011, Vol 257, Num 22, pp 9264-9268, issn 0169-4332, 5 p.Article

An ionic bottle for high-speed, long-retention memristive devicesSTRUKOV, Dmitri B; WILLIAMS, R. Stanley.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 1033-1036, issn 0947-8396, 4 p.Article

Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si_1-xGe_x/Si virtual substratesPITERA, Arthur J; TARASCHI, G; LEE, M. L et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 7, pp G443-G447, issn 0013-4651Article

Properties of phosphorus-doped poly-SiGe films for microelectromechanical system applicationsJEON, Yoo-Chan; KING, Tsu-Jae; HOWE, Roger T et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 1, pp H1-H6, issn 0013-4651Article

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Pulsed electrodeposition and magnetism of two-dimensional assembly of controlled-size Co particles on Si substratesRASTEI, M. V; COLIS, S; MECKENSTOCK, R et al.Surface science. 2006, Vol 600, Num 10, pp 2178-2183, issn 0039-6028, 6 p.Article

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Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospectsBENT, Stacey F.Surface science. 2002, Vol 500, Num 1-3, pp 879-903, issn 0039-6028Article